In this paper characteristics of a linear, 6H-SiC photoconductive
semiconductor switch are presented. The vanadium-doped semi-insulated 6H-SiC
PCSS device is designed in a back-triggered, radial switch structure. For this
purpose, three-dimensional (3D) device modeling tool was used to model and test
the optically initiated 6H-SiC switch. Dark I–V characteristic results show that
newly proposed rear-illuminated radial switch structure extends the blocking
voltage by reducing the peak electric fields near electrodes. Also this radial
structure has higher dark resistance as compared to the previous 6H-SiC PCSS
experimental results. The ON-state characteristics of vanadium compensated
6H-SiC switch demonstrate that dynamic switch resistance, another important
switching parameter, is lower than previous semiconductor switches with opposing
electrodes. This paper evaluates photoconductivity tests for different laser
wavelengths and different substrate thicknesses. Also Transient characteristics
of PCSS for two different type of compensation have been reported. The
photoconductivity results are discussed showing the advantages and disadvantages
of SDDA and DDSA compensated materials.
Keywords: Photoconductive semiconductor
switch; Semi-insulating 6H-SiC; High power; Vanadium compensation; Radial lateral structure
Source: Sciencedirect
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