Damages and/or defects induced by γ-rays irradiation on 6H-SiC
single crystals in channeled configuration towards 〈006〉/〈0012〉 crystallographic
directions are reported in the range of 0–1200 kGy. Atomic force microscopy,
X-rays diffraction, Raman and photoluminescence investigations were used to
obtain a comprehensive set of informations on the nature and population
distribution of the induced defects. Primarily, there was no carbon
clusterization upon γ-rays irradiation and hence no formation of others SiC
polytypes. In contrast, the γ-rays irradiation has induced an increase of the
surface roughness at higher doses, which indicates a structural degradation.
Larger doses induced an emergence of deeper shallow traps at energies greater
than 350 meV below the bandgap.
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