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SiC(silicon carbide) 6H
The influence of polarity on the SiC crystal growth has been demonstrated using a dual-seed technique to grow on both the C- and Si-face seed simultaneously. For the investigated range of growth conditions, 4H-SiC crystals were grown on the C-face of 6H-SiC seed crystals with on-axis orientation, when the growth rate exceeded 1.2 g/h. We were never able to grow 4H-SiC on the Siface of 6H- or 4H-SiC seed crystals under these growth conditions. The incorporation of nitrogen is shown to be 2–3 times higher in crystals grown on the C-face than on the Si-face, and is independent of both polytype and 8° off-axis orientation. The addition of more than 15% silicon powder to the SiC sublimation source resulted in polycrystalline growth.
Xiamen Powerway Advanced Material Co.,Ltd  can offer SiC 6H as follows:
1)5*5,10*10,15*15,2” SiC 6H
3" dia 6H-N
Type/ Dopant :  N / Nitrogen
Orientation : <0001>±0.5°;3.5°towards toward < 112(bar)0 > + 0.5°
Thickness : 330 ± 25 um;440+/-25um
MPD10cm-2MPD30 cm-2MPD100 cm-2                   
RT:0.02-0.2Ω·cm                         
Bow/Warp/TTV<35um
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
2)10mm*10mm,2",3” SiC 6H
3" dia 6H-SI
Type/ Dopant : SI / V
Orientation : <0001>±0.5°           
Thickness : 330 ± 25 um;430±25um
MPD10cm-2MPD30 cm-2MPD100 cm-2                   
RT:1E5Ω·cm                         
Bow/Warp/TTV:<35um
3)2”, 3",4"SiC 4H  
2" dia 4H-N
Type/ Dopant : N / Nitrogen
Orientation : : <0001>±0.5°;4 +/-0.5°                        
Thickness : 350 ± 25 um
MPD10cm-2MPD30 cm-2MPD100 cm-2                    
RT:0.01-0.1 Ω·cm                          
Bow/Warp/TTV<45um
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
4)2”, 3",4"SiC 4H  
2" dia 4H-SI
Type/ Dopant : SI / V
Orientation : : <0001>±0.5°;4 +/-0.5°  
Thickness : 350 ± 25 um
MPD10cm-2MPD30 cm-2MPD100 cm-2                 
RT:1E5Ω·cm                         
Bow/Warp/TTV<45um
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
5)Specification for Epitaxial Products on  SiC substrate
Parameter
Nominal value
On-wafer variation
Thickness of GaN buffer(um)
1.8 um
+/- 0.25 um
AlGaN compostion(%Al)
30%
+/-1.25 %
AlGaN thickness (nm)
7 nm
+/-1 nm
AlN thickness
1 nm
+/-0.5 nm
Sheet resistivity (ohms/sq)
<360 for SiC substrate (for 30% AlGaN) 
Std. Dev. < 7.5%
Mobility (cm2/V-sec)
>1700 for SiC substrate
 
Sheet concentration (/cm³)
>1e13
 
XRD(102)rocking curve FWHM (")
<300 for SiC substrate 
Typically 220 
XRD(002)rocking curve FWHM (")
<260 for SiC substrate 
Typically 180 
Bow
<30um
 
Buffer layer resistivity (ohms/sq)
>1e5
 
Substrate resistivity (ohms/sq)
>10000
 
Particulates or other defects(/cm²)
2
 
GaN Cap Layer
2nm
 


Basic parameters of 6H SiC
Crystal structure
6H-SiC
Wurtzite ( Hexagonal)C46v-P63mc
Remarks
Crystal structure
6H-SiC
Wurtzite ( Hexagonal)
 
Group of symmetry
6H-SiC
C46v-P63mc
 
Bulk modulus
 6H-SiC
2.2 x 1012 dyn cm-2
theoretical estimation
0.97 x 1012 dyn cm-2 (experimental data)
Debye temperature
 6H-SiC
1200 K
 
Melting point
 6H-SiC
3103 ± 40 K
at 35 atm. see also Phase diagram
Density
6H-SiC
3.21 g cm-3
300 K
Hardness
6H-SiC
9.2-9.3
on the Mohs scale
Surface microhardness
6H-SiC
2900-3100 kg mm-2
 
Dielectric constant
 6H-SiC
ε0,ort ~= 9.66
300 K
(static, ordinary direction)
Dielectric constant
6H-SiC
ε0, || ~= 10.03
300 K
(static, extraordinary direction)
Ratio between the static dielectric constant
6H-SiC
ε0,ort / ε0, || ~= 0.9631
300 K
(ordinary and extraordinary direction)
Dielectric constant
6H-SiC
εort ~= 6.52
300 K
(high frequency, ordinary direction)
Dielectric constant
6H-SiC
ε || ~= 6.70
300 K
(high frequency, extraordinary direction)
Infrared refractive index
 6H-SiC 
~=2.55 (c axis)
300 K
~=2.59 ( ||c axis)
Refractive index n(λ)
6H-SiC
n0(λ)~= 2.55531 + 3.34 x 104·λ-2
300K, 467nm < λ< 691nm
 ne(λ)~= 2.5852 + 3.68 x 104·λ-2
also see Refractive index n vs. wavelength and photon energy
Radiative recombination coefficient
6H-SiC
1.5 x 10-12 cm3/s
300 K, estimation
Optical photon energy
6H-SiC 
104.2 meV
300 K
Effective electron mass
6H-SiC
0.20mo
300 K
      (longitudinal)ml
Effective electron mass
6H-SiC
0.42mo
 
      (transverse)mt
Effective mass of density of states  mcd
6H-SiC
2.34mo
 
Effective mass of the density of states
6H-SiC
0.71mo
 
in one valley of conduction band mc
Effective mass of conductivity  mcc
6H-SiC
0.57mo
Remarks
Effective hall mass of density of state mv
6H-SiC
~1.0 mo
300 K
Lattice constant,
6H-SiC
a = 3.0730 A
297 K, Debye-Scherrer;
= 10.053
see also Temperature dependence

Categorizing the polytypes
A shorthand has been developed to catalogue the vast number of possible polytype crystal structures: Let us define three SiC bilayer structures (that is 3 atoms with two bonds in between in the pictures below) and label them as A, B and C. Elements A and B do not change the orientation of the bilayer (except for possible rotation by 120°, which does not change the lattice and is ignored hereafter); the only difference between A and B is shift of the lattice. Element C, however, twists the lattice by 60°.

Related Products:
6h sic 0001
6h-sic structure
6h-sic substrate
6h-sic lattice constant
6h-sic polytype
         



Source:PAM-XIAMEN

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