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SiC(silicon carbide) 6H The influence of polarity on the SiC crystal growth has been demonstrated using a dual-seed technique to grow on both the C- and Si-face seed simultaneously. For the investigated range of growth conditions, 4H-SiC crystals were grown on the C-face of 6H-SiC seed crystals with on-axis orientation, when the growth rate exceeded 1.2 g/h. We were never able to grow 4H-SiC on the Siface of 6H- or 4H-SiC seed crystals under these growth conditions. The incorporation of nitrogen is shown to be 2–3 times higher in crystals grown on the C-face than on the Si-face, and is independent of both polytype and 8° off-axis orientation. The addition of more than 15% silicon powder to the SiC sublimation source resulted in polycrystalline growth. 6H SIC wafer is firstly commercialized in 1991. For 6H polytype, normally its orientation should be on axis, that is C(0001), however some customers require specific application, also use off axis such as 4deg.off. Because of wide band gap, the carrier concentration of intrinsic SiC is low, that is why SIC electronic device may work at high temperature but small current leakage. However 6H-SIC is much lower carrier concentration:  6H-SIC: carrier concentration: ~1x10^-16/cm3 4H-SIC: carrier concentration: ~1x10^-9/cm3 Xiamen Powerway Advanced Material Co.,Ltd  can offer SiC 6H as follows: 1)5*5,10*10,15*15,2” SiC 6H 2" dia 6H-N Type/ Dopant :  N / Nitrogen Orientation : <0001>±0.5°;3.5°towards toward < 112(bar)0 > + 0.5° Thickness : 330 ± 25 um;440+/-25um MPD＜10cm-2；MPD＜30 cm-2；MPD＜100 cm-2                RT:0.02-0.2Ω•cm                          Bow/Warp/TTV<35um Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm 2)10mm*10mm,2" SiC 6H 2" dia 6H-SI Type/ Dopant : SI / V Orientation : <0001>±0.5°            Thickness : 330 ± 25 um;430±25um MPD＜10cm-2；MPD＜30 cm-2；MPD＜100 cm-2                RT:≥1E5Ω•cm                          Bow/Warp/TTV:<35um Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm 3) 2" SiC 6H 2" dia 6H-N Type/ Dopant : SI / V Orientation : <0001>of 4deg.off          Thickness : 330 ± 25 um; MPD＜10cm-2；MPD＜30 cm-2；MPD＜100 cm-2                  RT:0.02-0.2Ω•cm                      Bow/Warp/TTV:<35um Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm Bow/Warp/TTV:<35um 4)2”, 3",4"SiC 4H   2" dia 4H-N Type/ Dopant : N / Nitrogen Orientation : : <0001>±0.5°;4 +/-0.5°   Thickness : 350 ± 25 um MPD＜10cm-2；MPD＜30 cm-2；MPD＜100 cm-2                     RT:0.01-0.1 Ω•cm                           Bow/Warp/TTV<45um Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm 5)2”, 3",4"SiC 4H   2" dia 4H-SI Type/ Dopant : SI / V Orientation : : <0001>±0.5°;4 +/-0.5°  Thickness : 350 ± 25 um MPD＜10cm-2；MPD＜30 cm-2；MPD＜100 cm-2                RT:≥1E5Ω•cm                          Bow/Warp/TTV<45um Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm 5)Specification for Epitaxial Products on  SiC substrate Parameter Nominal value On-wafer variation Thickness of GaN buffer(um) 1.8 um +/- 0.25 um AlGaN compostion(%Al) 30% +/-1.25 % AlGaN thickness (nm) 7 nm +/-1 nm AlN thickness 1 nm +/-0.5 nm Sheet resistivity (ohms/sq) <360 for SiC substrate (for 30% AlGaN)  Std. Dev. < 7.5% Mobility (cm2/V-sec) >1700 for SiC substrate 　 Sheet concentration (/cm³) >1e13 　 XRD(102)rocking curve FWHM (") <300 for SiC substrate  Typically 220  XRD(002)rocking curve FWHM (") <260 for SiC substrate  Typically 180  Bow <30um 　 Buffer layer resistivity (ohms/sq) >1e5 　 Substrate resistivity (ohms/sq) >10000 　 Particulates or other defects(/cm²) ＜2 　 GaN Cap Layer 2nm 　 Basic parameters of 6H SiC Crystal structure 6H-SiC Wurtzite ( Hexagonal)C46v-P63mc Remarks Crystal structure 6H-SiC Wurtzite ( Hexagonal) 　 Group of symmetry 6H-SiC C46v-P63mc 　 Bulk modulus  6H-SiC 2.2 x 1012 dyn cm-2 theoretical estimation 0.97 x 1012 dyn cm-2 (experimental data) Debye temperature  6H-SiC 1200 K 　 Melting point  6H-SiC 3103 ± 40 K at 35 atm. see also Phase diagram Density 6H-SiC 3.21 g cm-3 300 K Hardness 6H-SiC 9.2-9.3 on the Mohs scale Surface microhardness 6H-SiC 2900-3100 kg mm-2 　 Dielectric constant  6H-SiC ε0,ort ~= 9.66 300 K (static, ordinary direction) Dielectric constant 6H-SiC ε0, || ~= 10.03 300 K (static, extraordinary direction) Ratio between the static dielectric constant 6H-SiC ε0,ort / ε0, || ~= 0.9631 300 K (ordinary and extraordinary direction) Dielectric constant 6H-SiC εort ~= 6.52 300 K (high frequency, ordinary direction) Dielectric constant 6H-SiC ε || ~= 6.70 300 K (high frequency, extraordinary direction) Infrared refractive index  6H-SiC  ~=2.55 (⊥c axis) 300 K ~=2.59 ( ||c axis) Refractive index n(λ) 6H-SiC n0(λ)~= 2.55531 + 3.34 x 104·λ-2 300K, 467nm < λ< 691nm  ne(λ)~= 2.5852 + 3.68 x 104·λ-2 also see Refractive index n vs. wavelength and photon energy Radiative recombination coefficient 6H-SiC 1.5 x 10-12 cm3/s 300 K, estimation Optical photon energy 6H-SiC  104.2 meV 300 K Effective electron mass 6H-SiC 0.20mo 300 K       (longitudinal)ml Effective electron mass 6H-SiC 0.42mo 　       (transverse)mt Effective mass of density of states  mcd 6H-SiC 2.34mo 　 Effective mass of the density of states 6H-SiC 0.71mo 　 in one valley of conduction band mc Effective mass of conductivity  mcc 6H-SiC 0.57mo Remarks Effective hall mass of density of state mv� 6H-SiC ~1.0 mo 300 K Lattice constant, 6H-SiC a = 3.0730 A 297 K, Debye-Scherrer; b = 10.053 see also Temperature dependence Categorizing the polytypes A shorthand has been developed to catalogue the vast number of possible polytype crystal structures: Let us define three SiC bilayer structures (that is 3 atoms with two bonds in between in the pictures below) and label them as A, B and C. Elements A and B do not change the orientation of the bilayer (except for possible rotation by 120°, which does not change the lattice and is ignored hereafter); the only difference between A and B is shift of the lattice. Element C, however, twists the lattice by 60°. Related Products: 6h sic 0001 6h-sic structure 6h-sic substrate 6h-sic lattice constant 6h-sic polytype           Source:PAM-XIAMEN If you need more information about SiC 6H, please visit our website:http://www.qualitymaterial.net, send us email at powerwaymaterial@gmail.com.