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SiC(silicon carbide) 6H
The influence of polarity on the SiC crystal growth has been demonstrated using a dual-seed technique to grow on both the C- and Si-face seed simultaneously. For the investigated range of growth conditions, 4H-SiC crystals were grown on the C-face of 6H-SiC seed crystals with on-axis orientation, when the growth rate exceeded 1.2 g/h. We were never able to grow 4H-SiC on the Siface of 6H- or 4H-SiC seed crystals under these growth conditions. The incorporation of nitrogen is shown to be 2–3 times higher in crystals grown on the C-face than on the Si-face, and is independent of both polytype and 8° off-axis orientation. The addition of more than 15% silicon powder to the SiC sublimation source resulted in polycrystalline growth.

6H SIC wafer is firstly commercialized in 1991. For 6H polytype, normally its orientation should be on axis, that is C(0001), however some customers require specific application, also use off axis such as 4deg.off.

Because of wide band gap, the carrier concentration of intrinsic SiC is low, that is why SIC electronic device may work at high temperature but small current leakage. However 6H-SIC is much lower carrier concentration: 
6H-SIC: carrier concentration: ~1x10^-16/cm3
4H-SIC: carrier concentration: ~1x10^-9/cm3

Xiamen Powerway Advanced Material Co.,Ltd  can offer SiC 6H as follows:
1)5*5,10*10,15*15,2” SiC 6H
2" dia 6H-N
Type/ Dopant :  N / Nitrogen
Orientation : <0001>±0.5°;3.5°towards toward < 112(bar)0 > + 0.5°
Thickness : 330 ± 25 um;440+/-25um
MPD<10cm-2;MPD<30 cm-2;MPD<100 cm-2                RT:0.02-0.2Ω•cm                         
Bow/Warp/TTV<35um
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm

2)10mm*10mm,2" SiC 6H
2" dia 6H-SI
Type/ Dopant : SI / V
Orientation : <0001>±0.5°           
Thickness : 330 ± 25 um;430±25um
MPD<10cm-2;MPD<30 cm-2;MPD<100 cm-2                RT:≥1E5Ω•cm                         
Bow/Warp/TTV:<35um
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
3) 2" SiC 6H
2" dia 6H-N
Type/ Dopant : SI / V
Orientation : <0001>of 4deg.off         
Thickness : 330 ± 25 um;
MPD<10cm-2;MPD<30 cm-2;MPD<100 cm-2                  RT:0.02-0.2Ω•cm                     
Bow/Warp/TTV:<35um
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
Bow/Warp/TTV:<35um
4)2”, 3",4"SiC 4H  
2" dia 4H-N
Type/ Dopant : N / Nitrogen
Orientation : : <0001>±0.5°;4 +/-0.5°  
Thickness : 350 ± 25 um
MPD<10cm-2;MPD<30 cm-2;MPD<100 cm-2                    
RT:0.01-0.1 Ω•cm                          
Bow/Warp/TTV<45um
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm

5)2”, 3",4"SiC 4H  
2" dia 4H-SI
Type/ Dopant : SI / V
Orientation : : <0001>±0.5°;4 +/-0.5° 
Thickness : 350 ± 25 um
MPD<10cm-2;MPD<30 cm-2;MPD<100 cm-2                RT:≥1E5Ω•cm                         
Bow/Warp/TTV<45um
Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
5)Specification for Epitaxial Products on  SiC substrate
Parameter
Nominal value
On-wafer variation
Thickness of GaN buffer(um)
1.8 um
+/- 0.25 um
AlGaN compostion(%Al)
30%
+/-1.25 %
AlGaN thickness (nm)
7 nm
+/-1 nm
AlN thickness
1 nm
+/-0.5 nm
Sheet resistivity (ohms/sq)
<360 for SiC substrate (for 30% AlGaN) 
Std. Dev. < 7.5%
Mobility (cm2/V-sec)
>1700 for SiC substrate
 
Sheet concentration (/cm³)
>1e13
 
XRD(102)rocking curve FWHM (")
<300 for SiC substrate 
Typically 220 
XRD(002)rocking curve FWHM (")
<260 for SiC substrate 
Typically 180 
Bow
<30um
 
Buffer layer resistivity (ohms/sq)
>1e5
 
Substrate resistivity (ohms/sq)
>10000
 
Particulates or other defects(/cm²)
2
 
GaN Cap Layer
2nm
 


Basic parameters of 6H SiC
Crystal structure
6H-SiC
Wurtzite ( Hexagonal)C46v-P63mc
Remarks
Crystal structure
6H-SiC
Wurtzite ( Hexagonal)
 
Group of symmetry
6H-SiC
C46v-P63mc
 
Bulk modulus
 6H-SiC
2.2 x 1012 dyn cm-2
theoretical estimation
0.97 x 1012 dyn cm-2 (experimental data)
Debye temperature
 6H-SiC
1200 K
 
Melting point
 6H-SiC
3103 ± 40 K
at 35 atm. see also Phase diagram
Density
6H-SiC
3.21 g cm-3
300 K
Hardness
6H-SiC
9.2-9.3
on the Mohs scale
Surface microhardness
6H-SiC
2900-3100 kg mm-2
 
Dielectric constant
 6H-SiC
ε0,ort ~= 9.66
300 K
(static, ordinary direction)
Dielectric constant
6H-SiC
ε0, || ~= 10.03
300 K
(static, extraordinary direction)
Ratio between the static dielectric constant
6H-SiC
ε0,ort / ε0, || ~= 0.9631
300 K
(ordinary and extraordinary direction)
Dielectric constant
6H-SiC
εort ~= 6.52
300 K
(high frequency, ordinary direction)
Dielectric constant
6H-SiC
ε || ~= 6.70
300 K
(high frequency, extraordinary direction)
Infrared refractive index
 6H-SiC 
~=2.55 (c axis)
300 K
~=2.59 ( ||c axis)
Refractive index n(λ)
6H-SiC
n0(λ)~= 2.55531 + 3.34 x 104·λ-2
300K, 467nm < λ< 691nm
 ne(λ)~= 2.5852 + 3.68 x 104·λ-2
also see Refractive index n vs. wavelength and photon energy
Radiative recombination coefficient
6H-SiC
1.5 x 10-12 cm3/s
300 K, estimation
Optical photon energy
6H-SiC 
104.2 meV
300 K
Effective electron mass
6H-SiC
0.20mo
300 K
      (longitudinal)ml
Effective electron mass
6H-SiC
0.42mo
 
      (transverse)mt
Effective mass of density of states  mcd
6H-SiC
2.34mo
 
Effective mass of the density of states
6H-SiC
0.71mo
 
in one valley of conduction band mc
Effective mass of conductivity  mcc
6H-SiC
0.57mo
Remarks
Effective hall mass of density of state mv
6H-SiC
~1.0 mo
300 K
Lattice constant,
6H-SiC
a = 3.0730 A
297 K, Debye-Scherrer;
= 10.053
see also Temperature dependence

Categorizing the polytypes
A shorthand has been developed to catalogue the vast number of possible polytype crystal structures: Let us define three SiC bilayer structures (that is 3 atoms with two bonds in between in the pictures below) and label them as A, B and C. Elements A and B do not change the orientation of the bilayer (except for possible rotation by 120°, which does not change the lattice and is ignored hereafter); the only difference between A and B is shift of the lattice. Element C, however, twists the lattice by 60°.

Related Products:
6h sic 0001
6h-sic structure
6h-sic substrate
6h-sic lattice constant
6h-sic polytype
         



Source:PAM-XIAMEN

If you need more information about SiC 6H, please visit our website:http://www.qualitymaterial.net, send us email at powerwaymaterial@gmail.com.



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