tag:blogger.com,1999:blog-90016140319814739832024-02-19T07:27:39.338-08:00SiC 6HPAM-XIAMEN Provide for 6H SiC,4H SiC,,If you have any question,Please let us know.wafer Qualitymaterial_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/10017452612054584096noreply@blogger.comBlogger147125tag:blogger.com,1999:blog-9001614031981473983.post-12540655906551381002020-04-19T20:35:00.002-07:002020-04-19T20:35:23.421-07:00Magnetic Structure of Mn-doped 6H-SiC<span style="color: #333333;"><span style="font-family: Arial, Helvetica, sans-serif;">We investigated the local magnetic properties of Mn-doped <b>6H-SiC</b> using ab-initio calculations. The calculation addresses various configurations of Mn single impurity and Mn dimers at substitutional/interstitial sites with and without neighboring Si and C vacancies. The calculations showed that a substitutional Mn atom at either Si or C sites possesses a magnetic moment. The Mn atom at Si site possesses larger magnetic moment than Mn atom at C site. Our calculations show that antiferro<b>magnetically</b> coupled pair of Mn atoms at Si sites with neighboring C vacancy is magnetically more stable. The calculation also showed that the interstitial sites with C neighbors are more favorable than those with Si and the magnetic moment for Mn at interstitial sites is less compared to that at substitutional sites. The results are used to understand the <b>experimental data</b> obtained on Mn- 6H-SiC for various Mn concentrations.</span></span><br />
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wafer Qualitymaterial_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/10017452612054584096noreply@blogger.com0tag:blogger.com,1999:blog-9001614031981473983.post-45841362179086008862020-04-12T20:44:00.003-07:002020-04-12T20:44:33.038-07:00β-FeSi2 films prepared on 6H-SiC substrates by magnetron sputtering<span style="font-family: Arial, Helvetica, sans-serif;"><span style="color: #333333;">β-FeSi</span><span style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">2</span><span style="color: #333333;"> thin films have been successfully prepared by magnetron sputtering and post rapid thermal annealing method on <b>6H-SiC</b> (0001) substrates using a FeSi</span><span style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">2</span><span style="color: #333333;"> target and a Si target.<b> X-ray diffraction</b> (XRD) and Raman spectroscopy are applied to analyze the formation of β-FeSi</span><span style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">2</span><span style="color: #333333;"> films. XRD spectra reveal that the amorphous FeSi</span><span style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">2</span><span style="color: #333333;"> films are transformed to β-FeSi</span><span style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">2</span><span style="color: #333333;"> phase as the annealing temperature is increased from 500 to 900 °C for 5 min and the optimal <b>annealing temperature </b>is 900 °C. The formation of β-FeSi</span><span style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">2</span><span style="color: #333333;"> is also confirmed by Raman spectroscopy. Scanning electron microscope (SEM) observations indicate that the film is flat, relatively compact and the interface between β-FeSi</span><span style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">2</span><span style="color: #333333;"> and 6H-SiC is clear. <b>Atomic force microscope</b> (AFM) measurements demonstrate that the surface roughness confirmed by the root mean square (RMS) of the β-FeSi</span><span style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">2</span><span style="color: #333333;"> film is 0.87 nm. Near-infrared spectrophotometer observation shows that the absorption coefficient is of the order of 10</span><span style="border: 0px; bottom: 1ex; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; vertical-align: baseline;">5</span><span style="color: #333333;"> cm</span><span style="border: 0px; bottom: 1ex; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; vertical-align: baseline;">−1</span><span style="color: #333333;"> and the optical band-gap of the β-FeSi</span><span style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">2</span><span style="color: #333333;"> film is 0.88 eV. The β-FeSi</span><span style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">2</span><span style="color: #333333;"> film with high crystal quality is fabricated by co-sputtering a FeSi</span><span style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">2</span><span style="color: #333333;"> target and a Si target for 60 min and annealing at 900 °C for 5 min.</span></span><br />
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wafer Qualitymaterial_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/10017452612054584096noreply@blogger.com1tag:blogger.com,1999:blog-9001614031981473983.post-5392073419246089002020-04-06T19:07:00.001-07:002020-04-06T19:07:21.349-07:00Electron beam processing of 6H-SiC substrate to obtain graphene-like carbon films<span style="font-family: Arial, Helvetica, sans-serif;"><span style="color: #333333;">We report on growth of graphene-like carbon films on <b>6H-SiC </b>{0001} substrate by electron-beam. The processing was carried out on a specialized <b>electron beam </b>system with the Pierce electron gun. The D, G, and 2D peaks as well as D/G (0.2-0.9) and 2D/G (0.7-0.9) ratios are detected on processed samples by Raman spectroscopy. The prominent bands D, G, and 2D are located at 1350, 1584, and 2707 cm</span><span style="border: 0px; bottom: 1ex; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; vertical-align: baseline;">−1</span><span style="color: #333333;">, respectively. Atomic force microscopy showed that the average roughness lies in the range from 5 to 30 nm, and ten point height – from 40 to 200 nm. The results demonstrate that the electron-beam technique is appropriate to form graphene-like structures directly on 6H-SiC substrates and could be used for <b>electronic device</b> fabrication.</span></span><br />
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wafer Qualitymaterial_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/10017452612054584096noreply@blogger.com1tag:blogger.com,1999:blog-9001614031981473983.post-42441328710471859592020-03-29T19:20:00.001-07:002020-03-29T19:20:06.439-07:00Chemical Vapor Cleaning of 6H‐SiC Surfaces<span style="font-family: Arial, Helvetica, sans-serif;"><span style="color: #333333;">The techniques (temperature range of study) of </span><i style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;">in situ</i><span style="color: #333333;"> thermal desorption (500‐1100°C) and chemical vapor cleaning (CVC) via exposure to </span><span style="border-color: initial; border-image: initial; border-style: initial; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: auto; line-height: inherit; width: auto;"><img align="MIDDLE" alt="" data-src="https://cdn.iopscience.com/images/1945-7111/146/9/3448/jes_146_9_3448ieqn1.jpg" src="https://cdn.iopscience.com/images/1945-7111/146/9/3448/jes_146_9_3448ieqn1.jpg" style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: auto; line-height: inherit; margin: 0px; max-width: 100%; padding: 0px; vertical-align: middle; width: auto;" /></span><span style="color: #333333;"> and/or </span><span style="border-color: initial; border-image: initial; border-style: initial; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: auto; line-height: inherit; width: auto;"><img align="MIDDLE" alt="" data-src="https://cdn.iopscience.com/images/1945-7111/146/9/3448/jes_146_9_3448ieqn2.jpg" src="https://cdn.iopscience.com/images/1945-7111/146/9/3448/jes_146_9_3448ieqn2.jpg" style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: auto; line-height: inherit; margin: 0px; max-width: 100%; padding: 0px; vertical-align: middle; width: auto;" /></span><span style="color: #333333;"> (750‐1100°C) have been investigated for preparing </span><span style="border-color: initial; border-image: initial; border-style: initial; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: auto; line-height: inherit; width: auto;"><img align="MIDDLE" alt="" data-src="https://cdn.iopscience.com/images/1945-7111/146/9/3448/jes_146_9_3448ieqn3.jpg" src="https://cdn.iopscience.com/images/1945-7111/146/9/3448/jes_146_9_3448ieqn3.jpg" style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: auto; line-height: inherit; margin: 0px; max-width: 100%; padding: 0px; vertical-align: middle; width: auto;" /></span><span style="color: #333333;"> surfaces suitable for <b>epitaxial growth</b> of SiC and III‐nitride films, and are compared with regard to surface purity, stoichiometry, and structural order. Oxide removal below the detection limits of Auger electron spectroscopy was achieved for all orientations via annealing in </span><span style="border-color: initial; border-image: initial; border-style: initial; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: auto; line-height: inherit; width: auto;"><img align="MIDDLE" alt="" data-src="https://cdn.iopscience.com/images/1945-7111/146/9/3448/jes_146_9_3448ieqn4.jpg" src="https://cdn.iopscience.com/images/1945-7111/146/9/3448/jes_146_9_3448ieqn4.jpg" style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: auto; line-height: inherit; margin: 0px; max-width: 100%; padding: 0px; vertical-align: middle; width: auto;" /></span><span style="color: #333333;"> at 850‐900°C or ≈200° lower than necessary by thermal desorption. No non‐SiC carbon was detected on the surface by X‐ray <b>photoelectron spectroscopy</b>. An approximately one‐tenth of a monolayer of oxygen coverage and significant quantities of non‐SiC carbon were detected for all 6H‐SiC surfaces prepared by thermal desorption. In contrast to the predominantly non‐<b>SiC</b> carbon‐rich surfaces prepared by thermal desorption, the stoichiometry of the SiC surfaces prepared by CVC could be manipulated from Si‐rich to C‐rich without non‐SiC carbon formation by either extending the </span><span style="border-color: initial; border-image: initial; border-style: initial; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: auto; line-height: inherit; width: auto;"><img align="MIDDLE" alt="" data-src="https://cdn.iopscience.com/images/1945-7111/146/9/3448/jes_146_9_3448ieqn5.jpg" src="https://cdn.iopscience.com/images/1945-7111/146/9/3448/jes_146_9_3448ieqn5.jpg" style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: auto; line-height: inherit; margin: 0px; max-width: 100%; padding: 0px; vertical-align: middle; width: auto;" /></span><span style="color: #333333;"> exposures or by following with </span><span style="border-color: initial; border-image: initial; border-style: initial; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: auto; line-height: inherit; width: auto;"><img align="MIDDLE" alt="" data-src="https://cdn.iopscience.com/images/1945-7111/146/9/3448/jes_146_9_3448ieqn6.jpg" src="https://cdn.iopscience.com/images/1945-7111/146/9/3448/jes_146_9_3448ieqn6.jpg" style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: auto; line-height: inherit; margin: 0px; max-width: 100%; padding: 0px; vertical-align: middle; width: auto;" /></span><span style="color: #333333;"> exposure. The latter surfaces also had lower concentrations of both oxygen and non‐SiC carbon and increased surface order. © 1999 The Electrochemical Society. All rights reserved.</span></span><br />
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<span style="font-family: Arial, Helvetica, sans-serif; font-size: x-small;"><span style="background-color: white; color: #222222;"><span style="text-align: justify;">Source:IOPscience</span></span></span><br />
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wafer Qualitymaterial_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/10017452612054584096noreply@blogger.com3tag:blogger.com,1999:blog-9001614031981473983.post-63043923303211782372020-03-23T00:34:00.000-07:002020-03-23T00:34:36.913-07:00Fibrous and Porous Microstructure Formation in 6H‐SiC by Anodization in HF Solution<span style="color: #333333; font-family: , "georgia" , "times new roman" , "stixgeneral" , serif;">The anodization reaction of <b>6H‐SiC</b> using a HF solution was investigated to understand the formation of porous SiC. The anodization reaction proceeds via two stages in which the oxidation of SiC is followed by the removal of SiO by fluorine ions. The <b>microstructure</b> of porous SiC changes from fibrous to dendritic as the anodization current is increased, and also shows other transitional morphology. The <b>photoluminescence</b> of these porous SiC with different microstructures was also investigated, and the photoluminescence band of higher energy was found to become enhanced as the microstructure of porous SiC changed from fibrous to porous dendritic.</span><br />
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wafer Qualitymaterial_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/10017452612054584096noreply@blogger.com0tag:blogger.com,1999:blog-9001614031981473983.post-62174323229072038312020-03-17T18:50:00.001-07:002020-03-19T23:58:40.194-07:00Design and Performance of a New Reactor for Vapor Phase Epitaxy of 3C, 6H, and 4H SiC<span style="font-family: "arial" , "helvetica" , sans-serif;"><span style="color: #333333;">The design of a new horizontal reactor for vapor phase epitaxy of <b>SiC </b>is presented. The reactor has a graphite inner cell with rectangular cross section to align the gas stream, and it may handle temperatures up to 1700°C. The inner cell is surrounded by a highly reflecting heat shield. 6H and 4H SiC were grown homoepitaxially, and 3C SiC was grown on (111) and (001) oriented Si. The 3C SiC is shown to be<b> epitaxially</b> oriented to the substrate, but with some mosaicity. For 4H and 6H SiC the crystallinity is limited by the substrates, and for layers thicker than 20 μm step bunching appears. Unintentionally doped material is n‐type and has a doping concentration in the 10</span><span style="border: 0px; bottom: 1ex; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; vertical-align: baseline;">15</span><span style="color: #333333;"> cm</span><span style="border: 0px; bottom: 1ex; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; vertical-align: baseline;">−3</span><span style="color: #333333;"> range. Intentional N and Al doping could be controlled from 10</span><span style="border: 0px; bottom: 1ex; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; vertical-align: baseline;">16</span><span style="color: #333333;"> cm</span><span style="border: 0px; bottom: 1ex; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; vertical-align: baseline;">−3</span><span style="color: #333333;"> up to 10</span><span style="border: 0px; bottom: 1ex; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; vertical-align: baseline;">19</span><span style="color: #333333;"> and 10</span><span style="border: 0px; bottom: 1ex; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; vertical-align: baseline;">21</span><span style="color: #333333;"> cm</span><span style="border: 0px; bottom: 1ex; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; vertical-align: baseline;">−3</span><span style="color: #333333;">, respectively. The compensation level is in all cases in the range of 10</span><span style="border: 0px; bottom: 1ex; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; vertical-align: baseline;">14</span><span style="color: #333333;"> cm</span><span style="border: 0px; bottom: 1ex; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; vertical-align: baseline;">−3</span><span style="color: #333333;">. The Al doping turn‐off from a concentration of </span><img align="MIDDLE" alt="" data-src="https://cdn.iopscience.com/images/1945-7111/143/9/2910/jes_143_9_2910ieqn1.jpg" src="https://cdn.iopscience.com/images/1945-7111/143/9/2910/jes_143_9_2910ieqn1.jpg" style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: auto; line-height: inherit; margin: 0px; max-width: 100%; padding: 0px; vertical-align: middle; width: auto;" /><span style="color: #333333;"> to </span><img align="MIDDLE" alt="" data-src="https://cdn.iopscience.com/images/1945-7111/143/9/2910/jes_143_9_2910ieqn2.jpg" src="https://cdn.iopscience.com/images/1945-7111/143/9/2910/jes_143_9_2910ieqn2.jpg" style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: auto; line-height: inherit; margin: 0px; max-width: 100%; padding: 0px; vertical-align: middle; width: auto;" /><span style="color: #333333;"> over 50 nm has been achieved by using an HCl etch at the interface. The thickness uniformity is within ±24% for growth at 1250°C, but improved to within ±6% for growth at 1550°C. From growth behavior at different growth conditions we conclude that the process is mainly diffusion limited.</span></span><br />
<span style="font-family: "arial" , "helvetica" , sans-serif;"><span style="color: #333333;"><br /></span></span><span style="font-family: Arial, Helvetica, sans-serif; font-size: x-small;"><span style="background-color: white; color: #222222;"><span style="text-align: justify;">Source:IOPscience</span></span></span><br />
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wafer Qualitymaterial_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/10017452612054584096noreply@blogger.com0tag:blogger.com,1999:blog-9001614031981473983.post-963198782845741752020-03-10T18:58:00.003-07:002020-03-19T23:58:56.026-07:00A comparative DFT study of electronic properties of 2H-, 4H- and 6H-SiC(0001) and SiC(000 \bar{1} ) clean surfaces: significance of the surface Stark effect<span style="font-family: "arial" , "helvetica" , sans-serif;"><span style="color: #333333;">The electric field, uniform within a slab, emerging due to Fermi level pinning at both sides of the slab, is analyzed using DFT simulations of SiC surface slabs of different thicknesses. It is shown that for thicker slabs the field is nonuniform and this fact is related to the surface state charge. Using the <b>electron density </b>and potential profiles, it is proved that for high-precision simulations it is necessary to take into account a sufficient number of SiC layers. We show that the use of 12 diatomic layers leads to satisfactory results. It is also demonstrated that the change of the opposite side slab termination, both by different types of atoms or by their location, can be used to adjust the <b>electric field</b> within the slab, creating a tool for simulation of surface properties, depending on the doping in the bulk of the semiconductor. Using these simulations, it was found that, depending on the electric field, the energy of the surface states changes in a different way than the energy of the bulk states. This criterion can be used to distinguish Shockley and Tamm surface states. The electronic properties, i.e. energy and type of surface states of the three clean surfaces: 2H-, 4H-, 6H-SiC(</span><nobr style="color: #333333;">0001</nobr><span style="color: #333333;">) and SiC(</span><img align="MIDDLE" alt="000 \bar{1}" data-src="https://cdn.iopscience.com/images/1367-2630/12/4/043024/nj339614ieqn2.gif" src="https://cdn.iopscience.com/images/1367-2630/12/4/043024/nj339614ieqn2.gif" style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: auto; line-height: inherit; margin: 0px; max-width: 100%; padding: 0px; vertical-align: middle; width: auto;" /><span style="color: #333333;">), are analyzed and compared using field-dependent DFT simulations.</span></span><br />
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wafer Qualitymaterial_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/10017452612054584096noreply@blogger.com0tag:blogger.com,1999:blog-9001614031981473983.post-89304488849380383642020-03-04T23:33:00.000-08:002020-03-19T23:59:08.359-07:00Sublimation Studies of SiC by Using a Quadrupole Mass Spectrometer<span style="font-family: "arial" , "helvetica" , sans-serif;"><span style="color: #333333;">The partial pressure of components in the gas phase in the sublimation process of SiC is of special interest for a better understanding of the Lely‐<b>crystal growth</b> process. It is known that at thermodynamic equilibrium the gas phase of SiC has a complex composition. We have sublimated<b> 6H‐SiC</b> and 3C‐SiC under equilibrium conditions in a tantalum Knudsen cell by resistance heating. Corresponding measurements with a carbon furnace show so many contaminants that no results for the composition of SiC gas phase can be evaluated. SiC powder of different polytypes (3C‐SiC and 6H‐SiC), different grain size (≤7 μm, 40–60 μm) and different Si/C ratio (addition of elemental silicon to the SiC powder) was evaporated in the<b> temperature range </b>1900 to 2200°C. The beam of the sublimated Si‐C compound molecules was analyzed with a quadrupole mass spectrometer. Different Si‐C molecules were identified by the ratio of the partial pressures of their natural isotopes. Si, </span><img align="MIDDLE" alt="" data-src="https://cdn.iopscience.com/images/1945-7111/145/10/3556/jes_145_10_3556ieqn1.jpg" src="https://static.iopscience.com/2.26.1/img/lazy-loading-placeholder.gif" style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: auto; line-height: inherit; margin: 0px; max-width: 100%; padding: 0px; vertical-align: middle; width: auto;" /><span style="color: #333333;">, and </span><img align="MIDDLE" alt="" data-src="https://cdn.iopscience.com/images/1945-7111/145/10/3556/jes_145_10_3556ieqn2.jpg" src="https://static.iopscience.com/2.26.1/img/lazy-loading-placeholder.gif" style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: auto; line-height: inherit; margin: 0px; max-width: 100%; padding: 0px; vertical-align: middle; width: auto;" /><span style="color: #333333;"> were the dominant species. The heats of sublimation for the different molecules were evaluated using the Clausius‐Clapeyron equation.</span></span><br />
<span style="font-family: Arial, Helvetica, sans-serif; font-size: x-small;"><span style="font-family: Arial, Helvetica, sans-serif;"><span style="color: #333333;"><br /></span></span><span style="background-color: white; color: #222222;"><span style="text-align: justify;">Source:IOPscience</span></span></span><br />
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wafer Qualitymaterial_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/10017452612054584096noreply@blogger.com2tag:blogger.com,1999:blog-9001614031981473983.post-61125944819214321802020-02-25T18:09:00.003-08:002020-03-19T23:59:21.384-07:00Structure of Directly Bonded Interfaces Between Si and SiC<span style="font-family: "arial" , "helvetica" , sans-serif;"><span style="color: #333333;">A Si-on-<b>SiC</b> wafer in which the Si wafer is directly bonded to the semi-insulating single-crystal <b>6H-SiC</b> without an intermediate layer was developed. A remarkable improvement in the heat-dissipation performance due to the high <b>thermal conductivity</b> of SiC was demonstrated for Si metal oxide semiconductor field-effect transistors fabricated on the bonded wafers. In transmission electron microscopy (TEM), linear defects similar to misfit dislocations with a density of 2-6 </span><span style="border: 0px; color: #333333; font-stretch: inherit; font-weight: 700; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;">×</span><span style="color: #333333;"> 107 lines/cm−2 were observed in plan-view TEM images of the Si/SiC interfaces. Comparison between Si(001)/6H-SiC(0001) and Si(111)/6H-SiC(0001) interfaces implies that the linear defects were formed on the Si side of the Si/SiC interface. Disordered Si layers with thicknesses of several atomic layers were observed in the cross-sectional TEM images, and the thickness is minimized at an annealing temperature of 1000{degree sign}C. The trap density at the interface was determined by admittance spectroscopy to be ~1 </span><span style="border: 0px; color: #333333; font-stretch: inherit; font-weight: 700; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;">×</span><span style="color: #333333;"> 1011 cm−2eV−1 at most.</span></span><br />
<span style="font-family: "arial" , "helvetica" , sans-serif;"><span style="color: #333333;"><br /></span></span><span style="font-size: x-small;"><span style="background-color: white; color: #222222; font-family: Arial, Tahoma, Helvetica, FreeSans, sans-serif;"><span style="font-family: Arial, Helvetica, sans-serif;"><span style="text-align: justify;">Source:IOPscience</span></span></span></span><br />
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wafer Qualitymaterial_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/10017452612054584096noreply@blogger.com0tag:blogger.com,1999:blog-9001614031981473983.post-6640729928136748602020-02-19T01:06:00.000-08:002020-03-19T23:59:58.796-07:00Combined Raman and luminescence assessment of epitaxial 6H-SiC films grown on 6H-SiC by low pressure vertical chemical vapour deposition<span style="color: #333333;"><span style="font-family: "arial" , "helvetica" , sans-serif;">Raman scattering and photoluminescence (PL) under near-UV excitations were used to assess the <b>6H-SiC</b> films epitaxied on 6H-SiC by low pressure vertical <b>chemical vapour deposition</b> (LPV-CVD). Raman linewidths and relative intensities with respect to the PL emissions were used to characterize the quality of the 6H-SiC films. Ti-related PL and outgoing resonance Raman scattering were studied. Samples grown by <b>LPV-CVD</b> with different growth parameters were compared on the basis of their Raman-PL spectra. This study showed that a combination of Raman and PL measurements can be used as a convenient method to assess the 6H-SiC/6H-SiC homoepitaxial structures.</span></span><br />
<span style="color: #333333;"><span style="font-family: "arial" , "helvetica" , sans-serif; font-size: x-small;"><br /></span></span><span style="font-family: "arial" , "helvetica" , sans-serif; font-size: x-small;"><span style="background-color: white; color: #222222;"><span style="text-align: justify;">Source:IOPscience</span></span></span><br />
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wafer Qualitymaterial_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/10017452612054584096noreply@blogger.com5tag:blogger.com,1999:blog-9001614031981473983.post-29357096602047427272020-02-11T23:35:00.000-08:002020-03-20T00:00:03.125-07:00Electronic and mechanical properties of Al (100)/6H–SiC (0001) interfaces: a first-principles study<span style="font-family: "arial" , "helvetica" , sans-serif;"><span style="color: #333333;">The electronic and mechanic properties of Al (100)/6H-SiC (0001) interfaces are investigated in detail using the exact first-principles density functional theory calculation. Two types of interfaces, C- and Si-terminated, are considered in this work due to the different atom species at the <b>6H-SiC</b> (0001) surface. Total energy calculations for these two types of interfaces reveal that the C-terminated Al (100)/6H- SiC (0001) interface has strong interfacial bonds with a large work of adhesion rather than the Si-terminated one. A detailed analysis of the bonding mechanism, hybridization of the surface states and charge transfer reveals the strong covalent character of the bonding for the Al (100)/6H-SiC (0001) reaction interface. By comparing the work of separation of different cleavage surfaces, we find that, for the Al (100)/6H-SiC (0001) interfaces, the fracture tends to occur at the Al-Al bonds, rather than at the C (Si)-Al bonds. Although the C-Al bond (</span><img align="MIDDLE" alt="${{\rm{E}}}_{ad}=4.85\,{\rm{J}}/{{\rm{m}}}^{2}$" data-src="https://cdn.iopscience.com/images/2053-1591/6/12/126316/mrxab5d4bieqn1.gif" src="https://static.iopscience.com/2.26.1/img/lazy-loading-placeholder.gif" style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: auto; line-height: inherit; margin: 0px; max-width: 100%; padding: 0px; vertical-align: middle; width: auto;" /><span style="color: #333333;">) is stronger than the Si-Al bond (</span><img align="MIDDLE" alt="${{\rm{E}}}_{ad}=3.35\,{\rm{J}}/{{\rm{m}}}^{2}$" data-src="https://cdn.iopscience.com/images/2053-1591/6/12/126316/mrxab5d4bieqn2.gif" src="https://static.iopscience.com/2.26.1/img/lazy-loading-placeholder.gif" style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: auto; line-height: inherit; margin: 0px; max-width: 100%; padding: 0px; vertical-align: middle; width: auto;" /><span style="color: #333333;">), it is easier to fracture at the Al-Al bond near the C-terminated Al (100)/6H-SiC (0001) interface because of its lower work of separation (</span><img align="MIDDLE" alt="${{\rm{W}}}_{{\rm{sep}}}=1.90\,{\rm{J}}/{\rm{m}}2$" data-src="https://cdn.iopscience.com/images/2053-1591/6/12/126316/mrxab5d4bieqn3.gif" src="https://static.iopscience.com/2.26.1/img/lazy-loading-placeholder.gif" style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: auto; line-height: inherit; margin: 0px; max-width: 100%; padding: 0px; vertical-align: middle; width: auto;" /><span style="color: #333333;">) and tension strength (</span><img align="MIDDLE" alt="$\gamma =11.55\,{\rm{GPa}}$" data-src="https://cdn.iopscience.com/images/2053-1591/6/12/126316/mrxab5d4bieqn4.gif" src="https://static.iopscience.com/2.26.1/img/lazy-loading-placeholder.gif" style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: auto; line-height: inherit; margin: 0px; max-width: 100%; padding: 0px; vertical-align: middle; width: auto;" /><span style="color: #333333;">).</span></span><br />
<span style="font-family: "arial" , "helvetica" , sans-serif;"><span style="color: #333333;"><br /></span></span><span style="font-size: x-small;"><span style="background-color: white; color: #222222; font-family: "arial" , "tahoma" , "helvetica" , "freesans" , sans-serif;"><span style="font-family: "arial" , "helvetica" , sans-serif;"><span style="text-align: justify;">Source:IOPscience</span></span></span></span><br />
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wafer Qualitymaterial_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/10017452612054584096noreply@blogger.com0tag:blogger.com,1999:blog-9001614031981473983.post-29413119287615769022020-01-20T19:34:00.003-08:002020-03-20T00:00:19.615-07:00An investigation of terahertz response in monocrystalline 6H-SiC for electro-optic sampling<span style="color: #333333;"><span style="font-family: "arial" , "helvetica" , sans-serif;">We theoretically investigate the feasibility of terahertz detection via electro-optic (EO) sampling using<b> 6H-SiC</b> single crystal. The frequency response is simulated based on the principle of phase-matching condition. The optical dispersion of 6H-SiC was calculated by Sellmeier equation. In collinear incidence approach, the THz detectable bandwidths are simulated by a frequency response function at different excitation wavelengths. The cut-off frequency as a function of crystal thickness is revealed. In non-collinear incidence approach, the phase-matching condition can be achieved by using a silicon prism to couple the THz radiation into 6H-SiC <b>single crystal</b>. The crossing angle between THz radiation and incident optical beam is subject to the THz dispersion of Si prism and group index of 6H-SiC. The relation between THz coherence length and crossing angle is discussed. Both approaches display that 6H-SiC performs a broadband THz response for EO sampling at 515 nm. The sensitivity of EO sampling of 6H-SiC is triple times higher than GaP. In combination of the high critical breakdown field, 6H-SiC is consider to be a promising candidate for detecting high field THz radiation.</span></span><br />
<span style="color: #333333;"><span style="font-family: "arial" , "helvetica" , sans-serif;"><br /></span></span><span style="font-size: x-small;"><span style="background-color: white; color: #222222; font-family: Arial, Tahoma, Helvetica, FreeSans, sans-serif;"><span style="font-family: Arial, Helvetica, sans-serif;"><span style="text-align: justify;">Source:IOPscience</span></span></span></span><br />
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wafer Qualitymaterial_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/10017452612054584096noreply@blogger.com0tag:blogger.com,1999:blog-9001614031981473983.post-84333378393033841422020-01-13T18:41:00.001-08:002020-03-20T00:00:32.811-07:00Relaxation of 6H-SiC (0001) Surface and Si Adsorption on 6H-SiC (0001): an ab initio Study<span style="color: #333333;"><span style="font-family: "arial" , "helvetica" , sans-serif;">First-principles calculations are carried out to study the relaxation of 6H-SiC (0001) surface and chemisorption models of Si adatoms on four high-symmetry adsorption sites. The surface results show that Si-termination is the preferred termination of the 6H-SiC(0001) polar surface and is more stable than the C-terminated <b>6H-SiC</b>(0001) polar surface over a wide range of allowed chemical potentials. Four stable atomic configurations (top, bridge, hcp and fcc) are considered, and the adsorption energies and geometries, Mulliken charge population, and partial density of state (PDOS) properties are analyzed. Adsorption energy results show that the top site is the most stable site. The structural properties of Si adsorption on the SiC (0001) surface shows that increasing stability means decreasing bond lengths. Charge populations analysis and PDOS results imply that there is strong interaction between Si adatoms and 6H-SiC (0001) surface.</span></span><br />
<span style="color: #333333;"><span style="font-family: "arial" , "helvetica" , sans-serif;"><br /></span></span><span style="font-size: x-small;"><span style="background-color: white; color: #222222; font-family: Arial, Tahoma, Helvetica, FreeSans, sans-serif;"><span style="font-family: Arial, Helvetica, sans-serif;"><span style="text-align: justify;">Source:IOPscience</span></span></span></span><br />
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wafer Qualitymaterial_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/10017452612054584096noreply@blogger.com0tag:blogger.com,1999:blog-9001614031981473983.post-20642430648460625292020-01-07T16:58:00.001-08:002020-01-07T16:58:31.626-08:00Phase transformation of 6H-SiC at high pressure: An ab initio constant-pressure study<span style="font-family: Arial, Helvetica, sans-serif;"><span style="color: #333333;">We apply a constant-pressure </span><i style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;">ab initio</i><span style="color: #333333;"> technique to investigate the high-pressure phase transformation of <b>6H-SiC</b> and show that it transforms into a rocksalt structure. This phase change proceeds in two stages: 6H-SiC is first compressed along the </span><nobr style="color: #333333;"><i style="border: 0px; font-stretch: inherit; font-variant: inherit; font-weight: inherit; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;">c</i></nobr><span style="color: #333333;">-direction and then it undergoes a shear deformation on the </span><nobr style="color: #333333;"><i style="border: 0px; font-stretch: inherit; font-variant: inherit; font-weight: inherit; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;">a</i></nobr><span style="color: #333333;">-</span><nobr style="color: #333333;"><i style="border: 0px; font-stretch: inherit; font-variant: inherit; font-weight: inherit; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;">b</i></nobr><span style="color: #333333;"> planes. This transformation mechanism is quite similar to that of the wurtzite-to-rocksalt observed in 2H-SiC but there is no metastable phase identified along this path. The 6H-to-RS phase transition is also analyzed from the energy volume calculations. The computed transition parameters agree well with the <b>experimental data</b>.</span></span><br />
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<span style="font-family: Arial, Helvetica, sans-serif; font-size: x-small;"><span style="background-color: white; color: #333333;">Source:IOPscience</span><br style="background-color: white; color: #222222;" /><span style="background-color: white; color: #333333;"><br /></span><span style="background-color: white; color: #222222;"></span><span style="background-color: white; color: #333333;">For more information, please visit our website: <a href="http://www.semiconductorwafers.net/" style="color: #888888; text-decoration-line: none;">www.semiconductorwafers.net</a>,</span><br style="background-color: white; color: #222222;" /><span style="background-color: white; color: #333333;">send us email at <a href="mailto:sales@powerwaywafer.com" style="color: #888888; text-decoration-line: none;">sales@powerwaywafer.com</a> and <a href="mailto:powerwaymaterial@gmail.com" style="color: #888888; text-decoration-line: none;">powerwaymaterial@gmail.com</a></span></span>wafer Qualitymaterial_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/10017452612054584096noreply@blogger.com0tag:blogger.com,1999:blog-9001614031981473983.post-23280810393521212272020-01-07T16:57:00.001-08:002020-01-07T16:57:10.424-08:00Structure characterization of hard materials by precession electron diffraction and automatic diffraction tomography: 6H–SiC semiconductor and Ni1+xTe1 embedded nanodomains<span style="font-family: Arial, Helvetica, sans-serif;"><span style="color: #333333;">Using a combination of automated diffraction tomography and precession electron diffraction techniques, quasi-kinematical <b>electron diffraction</b> data sets were collected from intermetallic Ni</span><span style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">1+<i style="border: 0px; font-stretch: inherit; font-variant: inherit; font-weight: inherit; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;">x</i></span><span style="color: #333333;">Te</span><span style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">1</span><span style="color: #333333;"> embedded nanodomains and ion-thinned specimens of<b> 6H–SiC</b> semiconductor. Cell parameters and space groups were found automatically from the reconstructed 3D diffraction volume. The extracted intensities were used for fast </span><i style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;">ab initio</i><span style="color: #333333;"> structure determination by direct methods.</span></span><br />
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<span style="font-family: Arial, Helvetica, sans-serif; font-size: x-small;"><span style="background-color: white; color: #333333;">Source:IOPscience</span><br style="background-color: white; color: #222222;" /><span style="background-color: white; color: #333333;"><br /></span><span style="background-color: white; color: #222222;"></span><span style="background-color: white; color: #333333;">For more information, please visit our website: <a href="http://www.semiconductorwafers.net/" style="color: #888888; text-decoration-line: none;">www.semiconductorwafers.net</a>,</span><br style="background-color: white; color: #222222;" /><span style="background-color: white; color: #333333;">send us email at <a href="mailto:sales@powerwaywafer.com" style="color: #888888; text-decoration-line: none;">sales@powerwaywafer.com</a> and <a href="mailto:powerwaymaterial@gmail.com" style="color: #888888; text-decoration-line: none;">powerwaymaterial@gmail.com</a></span></span>wafer Qualitymaterial_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/10017452612054584096noreply@blogger.com0tag:blogger.com,1999:blog-9001614031981473983.post-293740071189835892020-01-02T19:45:00.001-08:002020-01-02T19:45:22.509-08:00Stress in (Al, Ga)N heterostructures grown on 6H-SiC and Si substrates byplasma-assisted molecular beam epitaxy<span style="font-family: Arial, Helvetica, sans-serif;"><span style="color: #333333;">The paper describes experimental results on low temperature plasma-assisted molecular beam epitaxy of <b>GaN</b>/AlN heterostructures on both <b>6H-SiC</b> and Si(111) substrates. We demonstrate that application of migration enhanced epitaxy and metal-modulated epitaxy for growth of AlN nucleation and buffer layers lowers the screw and edge(total)threading dislocation (TD) densities down to 1.7</span><img align="absmiddle" alt="centerdot" src="https://ej.iop.org/icons/Entities/centerdot.gif" style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: auto; line-height: inherit; margin: 0px; max-width: 100%; padding: 0px; vertical-align: middle; width: auto;" /><span style="color: #333333;">10</span><span style="border: 0px; bottom: 1ex; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; vertical-align: baseline;">8</span><span style="color: #333333;"> and 2</span><img align="absmiddle" alt="centerdot" src="https://ej.iop.org/icons/Entities/centerdot.gif" style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: auto; line-height: inherit; margin: 0px; max-width: 100%; padding: 0px; vertical-align: middle; width: auto;" /><span style="color: #333333;">10</span><span style="border: 0px; bottom: 1ex; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; vertical-align: baseline;">9</span><span style="color: #333333;"> cm</span><span style="border: 0px; bottom: 1ex; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; vertical-align: baseline;">-2</span><span style="color: #333333;">, respectively, in a 2.8-μm-thick GaN buffer layer grown atop of AlN/6H-SiC. The screw and total TD densities of 1.2</span><img align="absmiddle" alt="centerdot" src="https://ej.iop.org/icons/Entities/centerdot.gif" style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: auto; line-height: inherit; margin: 0px; max-width: 100%; padding: 0px; vertical-align: middle; width: auto;" /><span style="color: #333333;">10</span><span style="border: 0px; bottom: 1ex; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; vertical-align: baseline;">9</span><span style="color: #333333;"> and 7.4</span><img align="absmiddle" alt="centerdot" src="https://ej.iop.org/icons/Entities/centerdot.gif" style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: auto; line-height: inherit; margin: 0px; max-width: 100%; padding: 0px; vertical-align: middle; width: auto;" /><span style="color: #333333;">10</span><span style="border: 0px; bottom: 1ex; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; vertical-align: baseline;">9</span><span style="color: #333333;"> cm</span><span style="border: 0px; bottom: 1ex; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; vertical-align: baseline;">-2</span><span style="color: #333333;">, respectively, were achieved in a 1-μm-thickGaN/AlNheterostructure on Si(111). Stress generation and relaxation in GaN/AlN heterostructures were investigated by using multi-beam optical stress sensor (MOSS) to achieve zero substrate curvature at room temperature. It is demonstrated that a 1-μm-thick GaN/AlN buffer layer grown by PA MBE provides planar substrate morphology in the case of growth on Si substrates whereas 5-μm-thick GaN buffer layers have to be used to achieve the same when growing on 6H-SiC substrates.</span></span><br />
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<span style="font-family: Arial, Helvetica, sans-serif; font-size: x-small;"><span style="background-color: white; color: #333333;">Source:IOPscience</span><br style="background-color: white; color: #222222;" /><span style="background-color: white; color: #333333;"><br /></span><span style="background-color: white; color: #222222;"></span><span style="background-color: white; color: #333333;">For more information, please visit our website: <a href="http://www.semiconductorwafers.net/" style="color: #888888; text-decoration-line: none;">www.semiconductorwafers.net</a>,</span><br style="background-color: white; color: #222222;" /><span style="background-color: white; color: #333333;">send us email at <a href="mailto:sales@powerwaywafer.com" style="color: #888888; text-decoration-line: none;">sales@powerwaywafer.com</a> and <a href="mailto:powerwaymaterial@gmail.com" style="color: #888888; text-decoration-line: none;">powerwaymaterial@gmail.com</a></span></span>wafer Qualitymaterial_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/10017452612054584096noreply@blogger.com1tag:blogger.com,1999:blog-9001614031981473983.post-89818623807339096892019-12-24T23:55:00.003-08:002019-12-24T23:55:44.661-08:00Trap Centers in Germanium-Implanted and in As-Grown 6H-SiC<span style="color: #333333;"><span style="font-family: Arial, Helvetica, sans-serif;">We have investigated the trap centers in germanium (Ge)-ion-implanted SiC(6H-SiC:Ge) and in as-grown SiC(AG:6H-SiC) samples using photoluminescence (PL) and deep-level transient spectroscopy (DLTS). Three carbon-vacancy related luminescence peaks were observed in <b>6H-SiC</b>:Ge in PL measurements. Six electron trap centers were observed both in 6H-SiC:Ge and in AG:6H-SiC by DLTS. These trap-center-related peaks disappeared from both 6H-SiC:Ge and AG:6H-SiC after surface oxidation and subsequent removal of the oxide layers. Germanium atoms related to donor-type deep level at 1.2 eV below the conduction band edge is observed in 6H-SiC:Ge by DLTS. The six common trap centers are related to native defects. The deep-level activation energy, concentration and capture cross section are estimated.</span></span><br />
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<span style="font-family: Arial, Helvetica, sans-serif; font-size: x-small;"><span style="background-color: white; color: #333333;">Source:IOPscience</span><br style="background-color: white; color: #222222;" /><span style="background-color: white; color: #333333;"><br /></span><span style="background-color: white; color: #222222;"></span><span style="background-color: white; color: #333333;">For more information, please visit our website: <a href="http://www.semiconductorwafers.net/" style="color: #888888; text-decoration-line: none;">www.semiconductorwafers.net</a>,</span><br style="background-color: white; color: #222222;" /><span style="background-color: white; color: #333333;">send us email at <a href="mailto:sales@powerwaywafer.com" style="color: #888888; text-decoration-line: none;">sales@powerwaywafer.com</a> and <a href="mailto:powerwaymaterial@gmail.com" style="color: #888888; text-decoration-line: none;">powerwaymaterial@gmail.com</a></span></span>wafer Qualitymaterial_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/10017452612054584096noreply@blogger.com0tag:blogger.com,1999:blog-9001614031981473983.post-58330256934239413462019-12-17T18:01:00.005-08:002019-12-17T18:01:52.667-08:00Large-scale uniform bilayer graphene prepared by vacuum graphitization of 6H-SiC(0001) substrates<span style="font-family: Arial, Helvetica, sans-serif;"><span style="color: #333333;">We report on the preparation of large-scale uniform bilayer graphenes on nominally flat Si-polar <b>6H-SiC</b>(0001) substrates by flash annealing in ultrahigh vacuum. The resulting graphenes have a single thickness of one bilayer and consist of regular terraces separated by the triple <b>SiC bilayer</b> steps on the 6H-SiC(0001) substrates. </span><i style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;">In situ</i><span style="color: #333333;"> scanning tunneling microscopy reveals that suppression of pit formation on terraces and uniformity of SiC decomposition at step edges are the key factors to the uniform thickness. By studying the surface morphologies prepared under different annealing rates, it is found that the annealing rate is directly related to SiC decomposition, diffusion of the released Si/C atoms and strain relaxation, which together determine the final step structure and density of defects.</span></span><br />
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<span style="font-family: Arial, Helvetica, sans-serif; font-size: x-small;"><span style="background-color: white; color: #333333;">Source:IOPscience</span><br style="background-color: white; color: #222222;" /><span style="background-color: white; color: #333333;"><br /></span><span style="background-color: white; color: #222222;"></span><span style="background-color: white; color: #333333;">For more information, please visit our website: <a href="http://www.semiconductorwafers.net/" style="color: #888888; text-decoration-line: none;">www.semiconductorwafers.net</a>,</span><br style="background-color: white; color: #222222;" /><span style="background-color: white; color: #333333;">send us email at <a href="mailto:sales@powerwaywafer.com" style="color: #888888; text-decoration-line: none;">sales@powerwaywafer.com</a> and <a href="mailto:powerwaymaterial@gmail.com" style="color: #888888; text-decoration-line: none;">powerwaymaterial@gmail.com</a></span></span>wafer Qualitymaterial_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/10017452612054584096noreply@blogger.com1tag:blogger.com,1999:blog-9001614031981473983.post-13273811914322053472019-12-11T17:40:00.002-08:002019-12-11T17:40:16.752-08:00Origin of a fourfold symmetric (0 0 0 6) Bragg diffraction intensity in phiv-scan mode on a 6H-SiC crystal<span style="font-family: Arial, Helvetica, sans-serif;"><span style="color: #333333;">The quality of <b>silicon carbide (SiC)</b>, when used as a substrate, has profound effects on the growth of the homo/hetero-epitaxial film on it. Here, a fourfold symmetric (0006) x-ray diffraction intensity in a </span><i style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;"><img align="absmiddle" alt="phiv" src="https://ej.iop.org/icons/Entities/phiv.gif" style="border: 0px; font-stretch: inherit; font-style: inherit; font-variant: inherit; font-weight: inherit; height: auto; line-height: inherit; margin: 0px; max-width: 100%; padding: 0px; vertical-align: middle; width: auto;" /></i><span style="color: #333333;">-scan mode is found to have nothing to do with the deformation of wafers or the existence of mosaic domains, regardless of whether it is a double-sided polished <b>6H-SiC </b>wafer or a thick 6H-SiC slice. The experimental results show that both the diffraction intensity and its full width at half maximum as a function of the azimuth angle </span><i style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;"><img align="absmiddle" alt="phiv" src="https://ej.iop.org/icons/Entities/phiv.gif" style="border: 0px; font-stretch: inherit; font-style: inherit; font-variant: inherit; font-weight: inherit; height: auto; line-height: inherit; margin: 0px; max-width: 100%; padding: 0px; vertical-align: middle; width: auto;" /></i><span style="color: #333333;"> exhibit the features of four peaks and four valleys regularly. By measuring the bending of the diffraction planes along the azimuth angles at the peaks and valleys, saddle-shaped deformed (0 0 0 1) atomic planes of the 6H-SiC in macroscopic scale are hypothesized. Based on the hypothesis, a model analysis of the diffraction intensity matched well with the observed anisotropic symmetric x-ray diffraction in a 6H-SiC single crystal.</span></span><br />
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<span style="color: #333333; font-family: Arial, Helvetica, sans-serif; font-size: x-small;">Source:IOPscience</span><br />
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<span style="color: #333333; font-family: Arial, Helvetica, sans-serif; font-size: x-small;">For more information, please visit our website: <a href="http://www.semiconductorwafers.net/">www.semiconductorwafers.net</a>,</span><br />
<span style="color: #333333; font-family: Arial, Helvetica, sans-serif; font-size: x-small;">send us email at <a href="mailto:sales@powerwaywafer.com">sales@powerwaywafer.com</a> and <a href="mailto:powerwaymaterial@gmail.com">powerwaymaterial@gmail.com</a></span>wafer Qualitymaterial_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/10017452612054584096noreply@blogger.com0tag:blogger.com,1999:blog-9001614031981473983.post-19643433843144027232019-12-04T18:35:00.000-08:002019-12-04T18:35:17.393-08:00The synthesis and ultraviolet photoluminescence of 6H–SiC nanowires by microwave method<span style="color: #333333;"><span style="font-family: Arial, Helvetica, sans-serif;">In this paper, 6H–SiC nanowires have been largely synthesized by a novel and low-cost microwave method with the presence of nano-Al powders. Structural, morphological and <b>elemental analysis</b> revealed that the products consisted of Al-doped 6H–SiC nanowires with a diameter of 5–200 nm and a length of tens to hundreds of micrometres. Some unique properties are found in the Raman and <b>photoluminescence</b> (PL) spectra of the 6H–SiC nanowires, based on which a possible emission mechanism is also discussed. The PL spectrum shows clear evidence of the quantum confinement of 6H–SiC nanowires with the emission above the energy gap.</span></span><br />
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<span style="font-size: x-small;"><span style="background-color: white; color: #222222; font-family: Arial, Helvetica, sans-serif;">Source:IOPscience</span><br style="background-color: white; color: #222222; font-family: Arial, Helvetica, sans-serif;" /><span style="background-color: white; color: #222222; font-family: Arial, Helvetica, sans-serif;">For more information, please visit our website: <a href="http://www.semiconductorwafers.net/" style="color: #888888; text-decoration-line: none;">www.semiconductorwafers.net</a>,</span><br style="background-color: white; color: #222222; font-family: Arial, Helvetica, sans-serif;" /><span style="background-color: white; color: #222222; font-family: Arial, Helvetica, sans-serif;">send us email at </span><a href="mailto:sales@powerwaywafer.com" style="background-color: white; color: #888888; font-family: Arial, Helvetica, sans-serif; text-decoration-line: none;">sales@powerwaywafer.com</a><span style="background-color: white; color: #222222; font-family: Arial, Helvetica, sans-serif;"> and </span><a href="mailto:powerwaymaterial@gmail.com" style="background-color: white; color: #888888; font-family: Arial, Helvetica, sans-serif; text-decoration-line: none;">powerwaymaterial@gmail.com</a></span>wafer Qualitymaterial_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/10017452612054584096noreply@blogger.com0tag:blogger.com,1999:blog-9001614031981473983.post-25669823792459078162019-11-27T18:43:00.004-08:002019-11-27T18:43:28.005-08:00Electrical properties and microstructural characterization of Ni/Ta contacts to n-type 6H–SiC*<span style="font-family: Arial, Helvetica, sans-serif;"><span style="color: #333333;">A Ni/Ta bilayer is deposited on n-type 6H–SiC and then annealed at different temperatures to form an <b>ohmic contact</b>. The electrical properties are characterized by </span><i style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;">I</i><span style="color: #333333;">–</span><i style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;">V</i><span style="color: #333333;"> curve measurement and the specific contact resistance is extracted by the transmission line method. The phase formation and microstructure of the Ni/Ta bilayer are studied after thermal annealing. The crystalline and microstructure properties are analyzed by using glance incident x-ray diffraction (GIXRD), Raman spectroscopy, and transmission electron microscopy. It is found that the transformation from the Schottky to the Ohmic occurs at 1050 °C and the GIXRD results show a distinct phase change from Ta</span><span style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">2</span><span style="color: #333333;">C to TaC at this temperature. A specific <b>contact resistance</b> of 6.5</span><span style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; font-weight: 700; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;">×</span><span style="color: #333333;"> 10</span><span style="border: 0px; bottom: 1ex; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; vertical-align: baseline;">−5</span><span style="color: #333333;"> Ω</span><img align="absmiddle" alt="centerdot" src="https://ej.iop.org/icons/Entities/centerdot.gif" style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: auto; line-height: inherit; margin: 0px; max-width: 100%; padding: 0px; vertical-align: middle; width: auto;" /><span style="color: #333333;">cm</span><span style="border: 0px; bottom: 1ex; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; vertical-align: baseline;">2</span><span style="color: #333333;"> is obtained for sample Ni(80 nm)/Ta(20 nm)/6H–SiC after being annealed at 1050 °C. The formation of the TaC phase is regarded as the main reason for the excellent Ohmic properties of the Ni/Ta contacts to 6H–SiC. Raman and TEM data reveal that the graphite carbon is drastically consumed by the Ta element, which can improve the contact thermal stability. A schematic diagram is proposed to illustrate the microstructural changes of Ni/Ta/6H–SiC when annealed at<b> different temperatures.</b></span></span><br />
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<span style="font-family: Arial, Helvetica, sans-serif; font-size: x-small;"><span style="background-color: white; color: #222222;">Source:IOPscience</span><br style="background-color: white; color: #222222;" /><span style="background-color: white; color: #222222;">For more information, please visit our website: <a href="http://www.semiconductorwafers.net/" style="color: #888888; text-decoration-line: none;">www.semiconductorwafers.net</a>,</span><br style="background-color: white; color: #222222;" /><span style="background-color: white; color: #222222;">send us email at </span><a href="mailto:sales@powerwaywafer.com" style="background-color: white; color: #888888; text-decoration-line: none;">sales@powerwaywafer.com</a><span style="background-color: white; color: #222222;"> and </span><a href="mailto:powerwaymaterial@gmail.com" style="background-color: white; color: #888888; text-decoration-line: none;">powerwaymaterial@gmail.com</a></span>wafer Qualitymaterial_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/10017452612054584096noreply@blogger.com0tag:blogger.com,1999:blog-9001614031981473983.post-61275891583703133052019-11-19T23:14:00.001-08:002019-11-19T23:14:49.821-08:00Recrystallization Phase in He-Implanted 6H-SiC<span style="font-family: "arial" , "helvetica" , sans-serif;">The evolution of the recrystallization phase in amorphous <b>6H-SiC</b> formed by He implantation followed by thermal annealing is investigated. Microstructures of recrystallized layers in 15 keV He ${}^{+}$ ion implanted 6H-SiC (0001) wafers are characterized by means of cross-sectional transmission electron microscopy (XTEM) and high-resolution TEM. Epitaxial recrystallization of buried amorphous layers is observed at an annealing temperature of 900°C. The recrystallization region contains a 3C-SiC structure and a 6H-SiC structure with different crystalline orientations. A <b>high density</b> of lattice defects is observed at the interface of different phases and in the periphery of He bubbles. With increasing annealing to 1000°C, 3C-SiC and columnar epitaxial growth 6H-SiC become unstable, instead of [0001] orientated 6H-SiC. In addition, the density of lattice defects increases slightly with increasing annealing. The possible mechanisms for explanation are also discussed.</span><br />
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<span style="font-family: "arial" , "helvetica" , sans-serif; font-size: x-small;">Source:IOPscience</span><br />
<span style="font-family: "arial" , "helvetica" , sans-serif; font-size: x-small;">For more information, please visit our website: <a href="http://www.semiconductorwafers.net/">www.semiconductorwafers.net</a>,</span><br />
<span style="font-family: arial, helvetica, sans-serif; font-size: x-small;">send us email at </span><a href="mailto:sales@powerwaywafer.com" style="font-family: arial, helvetica, sans-serif; font-size: small;">sales@powerwaywafer.com</a><span style="font-family: arial, helvetica, sans-serif; font-size: x-small;"> and </span><a href="mailto:powerwaymaterial@gmail.com" style="font-family: arial, helvetica, sans-serif; font-size: small;">powerwaymaterial@gmail.com</a><span style="font-family: "arial" , "helvetica" , sans-serif; font-size: x-small;"></span>wafer Qualitymaterial_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/10017452612054584096noreply@blogger.com0tag:blogger.com,1999:blog-9001614031981473983.post-92042170047225793562019-11-11T01:45:00.000-08:002019-11-11T01:45:36.127-08:00High-quality AlN growth on 6H-SiC substrate using three dimensional nucleation by low-pressure hydride vapor phase epitaxy<span style="font-family: Arial, Helvetica, sans-serif;">There is a method of controlling <b>nucleation</b> and lateral growth using the three-dimensional (3D) and two-dimensional (2D) growth modes to reduce the dislocation density. We performed 3D–2D-AlN growth on 6H-SiC substrates to obtain high-quality and crack-free AlN layers by low-pressure hydride vapor phase epitaxy (LP-HVPE). First, we performed 3D-AlN growth directly on a <b>6H-SiC </b>substrate. With increasing V/III ratio, the AlN island density decreased and the grain size increased. Second, 3D–2D-AlN layers were grown directly on a 6H-SiC substrate. With increasing the V/III ratio of 3D-AlN, the crystalline qualities of the 3D–2D-AlN layer were improved. Third, we performed 3D–2D-AlN growth on a trench-patterned 6H-SiC substrate. The crack density was reduced to relax the stress by voids. We also evaluated the threading dislocation density by using molten KOH/NaOH etching. As a result, the estimated edge dislocation density of the 3D–2D-AlN sample was 3.9 × 108 cm−2.</span><br />
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<span style="background-color: white; color: #222222; font-family: arial, helvetica, sans-serif; font-size: 13.2px;">Source:IOPscience</span><br style="background-color: white; color: #222222; font-family: Arial, Tahoma, Helvetica, FreeSans, sans-serif; font-size: 13.2px;" /><span style="background-color: white; color: #222222; font-family: arial, helvetica, sans-serif; font-size: 13.2px;"><span style="color: #444444;">For more information, please visit our website: </span><span lang="EN-US" style="color: #444444;"><v:shapetype coordsize="21600,21600" filled="f" id="_x0000_t75" o:preferrelative="t" o:spt="75" path="m@4@5l@4@11@9@11@9@5xe" stroked="f"><v:stroke joinstyle="miter"><v:formulas><v:f eqn="if lineDrawn pixelLineWidth 0"><v:f eqn="sum @0 1 0"><v:f eqn="sum 0 0 @1"><v:f eqn="prod @2 1 2"><v:f eqn="prod @3 21600 pixelWidth"><v:f eqn="prod @3 21600 pixelHeight"><v:f eqn="sum @0 0 1"><v:f eqn="prod @6 1 2"><v:f eqn="prod @7 21600 pixelWidth"><v:f eqn="sum @8 21600 0"><v:f eqn="prod @7 21600 pixelHeight"><v:f eqn="sum @10 21600 0"></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:formulas><v:path gradientshapeok="t" o:connecttype="rect" o:extrusionok="f"><o:lock aspectratio="t" v:ext="edit"></o:lock></v:path></v:stroke></v:shapetype><v:shape id="图片_x0020_1" o:spid="_x0000_i1025" style="height: 11.25pt; visibility: visible; width: 15pt;" type="#_x0000_t75"><v:imagedata o:title="%W@GJ$ACOF(TYDYECOKVDYB" src="file:///C:\Users\ADMINI~1\AppData\Local\Temp\msohtmlclip1\01\clip_image001.png"></v:imagedata></v:shape></span><span lang="EN-US"><a href="http://www.semiconductorwafers.net/" style="color: #4d469c; text-decoration-line: none;">www.semiconductorwafers.net</a>,</span></span><br style="background-color: white; color: #222222; font-family: Arial, Tahoma, Helvetica, FreeSans, sans-serif; font-size: 13.2px;" /><span style="background-color: white; color: #222222; font-family: arial, helvetica, sans-serif; font-size: 13.2px;"><span style="color: #444444;">send us email at <a href="mailto:sales@powerwaywafer.com" style="color: #888888; text-decoration-line: none;">sales<span style="color: #4d469c;">@powerwaywafer.com</span></a> and <a href="mailto:powerwaymaterial@gmail.com" style="color: #4d469c; text-decoration-line: none;">powerwaymaterial@gmail.com</a></span></span>wafer Qualitymaterial_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/10017452612054584096noreply@blogger.com1tag:blogger.com,1999:blog-9001614031981473983.post-30253859529515432272019-11-06T18:25:00.006-08:002019-11-06T18:26:41.993-08:00An investigation of terahertz response in monocrystalline 6H-SiC for electro-optic sampling<span style="font-family: "arial" , "helvetica" , sans-serif;">We theoretically investigate the feasibility of terahertz detection via electro-optic (EO) sampling using 6H-SiC <b>single crystal.</b> The frequency response is simulated based on the principle of phase-matching condition. The optical dispersion of 6H-SiC was calculated by Sellmeier equation. In collinear incidence approach, the THz detectable bandwidths are simulated by a frequency response function at different excitation wavelengths. The cut-off frequency as a function of crystal thickness is revealed. In non-collinear incidence approach, the phase-matching condition can be achieved by using a silicon prism to couple the THz radiation into <b>6H-SiC</b> single crystal. The crossing angle between THz radiation and incident optical beam is subject to the THz dispersion of Si prism and group index of 6H-SiC. The relation between THz coherence length and crossing angle is discussed. Both approaches display that 6H-SiC performs a broadband THz response for EO sampling at 515 nm. The sensitivity of EO sampling of 6H-SiC is triple times higher than GaP. In combination of the high critical breakdown field, 6H-SiC is consider to be a promising candidate for detecting high field THz radiation.</span><br />
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<span style="background-color: white; font-family: "arial" , "helvetica" , sans-serif; font-size: 13.2px;">Source:IOPscience</span><br />
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<br />wafer Qualitymaterial_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/10017452612054584096noreply@blogger.com0tag:blogger.com,1999:blog-9001614031981473983.post-22999511624619526222019-10-28T23:35:00.004-07:002019-10-28T23:35:39.245-07:00Chinese Physics Letters PAPER Relaxation of 6H-SiC (0001) Surface and Si Adsorption on 6H-SiC (0001): an ab initio Study*<span style="font-family: Arial, Helvetica, sans-serif;">First-principles calculations are carried out to study the relaxation of 6H-SiC (0001) surface and chemisorption models of Si adatoms on four high-symmetry adsorption sites. The surface results show that Si-termination is the preferred termination of the 6H-SiC(0001) polar surface and is more stable than the C-terminated <b>6H-SiC</b>(0001) polar surface over a wide range of allowed chemical potentials. Four stable atomic configurations (top, bridge, hcp and fcc) are considered, and the adsorption energies and geometries, Mulliken charge population, and partial density of state (PDOS) properties are analyzed. Adsorption energy results show that the top site is the most stable site. The structural properties of Si adsorption on the SiC (0001) surface shows that increasing stability means decreasing bond lengths. Charge populations analysis and PDOS results imply that there is strong interaction between Si adatoms and 6H-SiC (0001) surface.</span><br />
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<span lang="EN-US" style="color: black;"><span style="font-family: Arial, Helvetica, sans-serif;">Source:IOPscience</span></span><br /><span style="font-family: Arial, Helvetica, sans-serif;"><span style="background-color: white; color: #222222; font-size: 13.2px;"><span style="color: #444444;">send us email at <a href="mailto:sales@powerwaywafer.com" style="color: #888888; text-decoration-line: none;">sales<span style="color: #4d469c;">@powerwaywafer.com</span></a> and <a href="mailto:powerwaymaterial@gmail.com" style="color: #4d469c; text-decoration-line: none;">powerwaymaterial@gmail.com</a></span></span></span></div>
<span style="font-family: Arial, Helvetica, sans-serif;"><span style="background-color: white; color: #222222; font-size: 13.2px;"><span style="color: #444444;">For more information, please visit our website: </span><span lang="EN-US" style="color: #444444;"><v:shapetype coordsize="21600,21600" filled="f" id="_x0000_t75" o:preferrelative="t" o:spt="75" path="m@4@5l@4@11@9@11@9@5xe" stroked="f"><v:stroke joinstyle="miter"><v:formulas><v:f eqn="if lineDrawn pixelLineWidth 0"><v:f eqn="sum @0 1 0"><v:f eqn="sum 0 0 @1"><v:f eqn="prod @2 1 2"><v:f eqn="prod @3 21600 pixelWidth"><v:f eqn="prod @3 21600 pixelHeight"><v:f eqn="sum @0 0 1"><v:f eqn="prod @6 1 2"><v:f eqn="prod @7 21600 pixelWidth"><v:f eqn="sum @8 21600 0"><v:f eqn="prod @7 21600 pixelHeight"><v:f eqn="sum @10 21600 0"></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:formulas><v:path gradientshapeok="t" o:connecttype="rect" o:extrusionok="f"><o:lock aspectratio="t" v:ext="edit"></o:lock></v:path></v:stroke></v:shapetype><v:shape id="图片_x0020_1" o:spid="_x0000_i1025" style="height: 11.25pt; visibility: visible; width: 15pt;" type="#_x0000_t75"><v:imagedata o:title="%W@GJ$ACOF(TYDYECOKVDYB" src="file:///C:\Users\ADMINI~1\AppData\Local\Temp\msohtmlclip1\01\clip_image001.png"></v:imagedata></v:shape></span><span lang="EN-US"><a href="http://www.semiconductorwafers.net/" style="color: #4d469c; text-decoration-line: none;">www.semiconductorwafers.net</a>,</span></span></span>wafer Qualitymaterial_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/10017452612054584096noreply@blogger.com0