We report on the electrical characterization,
by means of deep level transient spectroscopy, of electron-irradiated Al-doped
6H-SiC epilayers. Samples were irradiated with either 116 keV, in order to
displace only carbon atoms, or 400 keV. Seven deep traps, in the 0.1–1.6 eV
range above the valence band, were found. The thermal stability of the detected
levels was analyzed by performing an isochronal annealing series in the
100–1800 °C temperature range and the atomic structure of most of the detected
traps was found to be related to C-displacement.
Source:IOPscience
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