An optical characterization method for determination of
spatial doping level concentration in n-type 4H-SiC and p-type 6H-SiC is
discussed. The absorption bands of free charge carriers at 460 nm in n-type
4H-SiC are used to determine its doping concentration. In p-type 6H-SiC, the
band edge related absorption at 410 nm is a measure for the doping
concentration. In both cases, Hall measurements are performed for calibration.
Various examples of SiC-wafer mappings are shown and the relationships to
crystal growth conditions, i.e. control of doping level and distribution, are
investigated.
Source:
Materials Science and Engineering: B
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