II-VI has developed an Advanced PVT (APVT) process for the
growth of nominally undoped (vanadium-free) semi-insulating 2” and 3” diameter
6H-SiC crystals with room temperature resistivity up to 1010 W·cm. The process
utilizes high-purity SiC source and employs special measures aimed at the
reduction of the impurity background. The APVT-grown material demonstrates
concentrations of B and N reduced to about 2·1015cm-3. Wafer resistivity has
been studied and correlated with Schottky barrier capacitance, yielding the
density of deep compensating centers in 6H-SiC in the low 1015 cm-3 range for
both ntype and p-type material. The nearly equal density of deep donors and
deep acceptors ndicates that the centers responsible for the intrinsic
compensation can be amphoteric. TheEPR density of spins from free carbon
vacancies is about 1014 cm-3. It is also hypothesized that impurity-vacancy
complexes can be present in the undoped material and participate in
compensation.
Source:Applied Surface Science
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6H-SiC Single Crystals, please visit our
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