An improved model for the non-uniformly doped
channel 6H-SiC MOSFET incorporating the incomplete ionization of the dopant
impurities using the Fermi–Dirac statistics is developed. The charge-sheet
approach is used to evaluate the surface potential, quasi-fermi level, drain current
and transconductance for all regions of operation, i.e. subthreshold, linear
and saturation. Results so obtained are matched well with the simulated data
for two different doping profiles. The improved model will be suitable for CAD
(computer aided design) applications to predict the behaviour of the 6H-SiC
MOSFET prior to actual device fabrication.
Source:IOPscience
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