Piezoresistance in n-type 6H SiC was analyzed
on the basis of electron transfer and mobility shift mechanisms for hexagonal
many-valley semiconductors. Three important gauge factors or coefficients for
piezoresistive sensor application, i.e., the longitudinal, transverse and
shear, were calculated by using band parameters. The calculation was compared
with experimental results taken from the literature. It was shown that
incorporation of the electron transfer and the mobility shift mechanisms gives
reasonable interpretation for the piezoresistance in n-type 6H SiC within the temperature
range from 300 K to 773 K, and impurity concentration n = 2 × 1019 to 3.3 ×
1019 cm−3. These conditions correspond to typical operation ranges of
state-of-the-art MEMS-based piezoresistive sensors.
Source:IOPscience
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