Non-basal surfaces of 6H-SiC, which are thought to exhibit polar behaviour, were thermally oxidized in steam. The resulting oxide thickness was determined by two methods: a non-contact measurement of the oxide capacitance and a physical measurement of the step height from an etched pattern. The
surface was found to oxidize faster than its counterpart, i.e. the 
surface. When these results were compared with results of the oxidation of the basal {0001} and 
surfaces, the effective permittivity of the oxide was found to be closer to the ideal value of 3.9 for SiO2 grown on the and surfaces. This important result for these novel crystalline surfaces could be beneficial in the fabrication of MOSFET devices on SiC.
surface was found to oxidize faster than its counterpart, i.e. the surface. When these results were compared with results of the oxidation of the basal {0001} and surfaces, the effective permittivity of the oxide was found to be closer to the ideal value of 3.9 for SiO2 grown on the and surfaces. This important result for these novel crystalline surfaces could be beneficial in the fabrication of MOSFET devices on SiC.
Source:IOPscience
For more information, please visit
our website: www.semiconductorwafers.net,
send us email at
angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com
No comments:
Post a Comment