SiC is a promising material for high-temperature and the high-power devices. We propose local oxidation for the isolation of the p-n junction. The oxidation rate of silicon nitride is found to be low enough compared to the C face of 6H-SiC, even at 1200° C. The comparison between the process simulation and the experiment is made, with the results showing that the bird's beak of 6H-SiC is longer than that of silicon due to the smaller oxidation rate of 6H-SiC.
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