Study on the machined depth when nanoscratching on 6H-SiC using Berkovich indenter: Modelling and experimental study
A developed nanoscratching model for the Berkovich diamond indenter is presented.
The effects the elastic recovery and strain-hardening of the material during the scratching test were considered in the developed model.
The experimental data is close to the theoretical machined depth upon scratching in the edge-forward scratching direction, the chips are more easily expelled from the machined groove.
In order to investigate the deformation characteristics and material removing mechanism of the single crystal silicon carbide at the nanoscale, the nanoscratching tests were conducted on the surface of 6H-SiC (0 0 0 1) by using Berkovich indenter. In this paper, a theoretical model for nanoscratching with Berkovich indenter is proposed to reveal the relationship between the applied normal load and the machined depth. The influences of the elastic recovery and the stress distribution of the material are considered in the developed theoretical model. Experimental and theoretical machined depths are compared when scratching in different directions. Results show that the effects of the elastic recovery of the material, the geometry of the tip and the stress distribution of the interface between the tip and sample have large influences on the machined depth which should be considered for this kind of hard brittle material of 6H-SiC.
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