TEM characterization of Si films grown on 6H–SiC (0001) C-face
Si films with 〈111〉 preferred orientation have been prepared on 6H–SiC (0001) C-face by low-pressure chemical vapor deposition. The high-resolution transmission electron microscopy and the selected area electron diffraction results indicate that the Si film has epitaxial connection with the 6H–SiC substrate and the parallel-plane relationship of Si/6H–SiC heterojunction is (111)Si//(0001)6H–SiC. Misfit dislocation array is clearly observed at the Si/6H–SiC interface, which accommodates the most of lattice mismatch strain and make the lattice coincident at the Si/6H–SiC interface.
► Si/SiC heterojunction was employed to realize non-UV light operation of SiC devices. ► Si films of preferred orientation have been prepared on 6H–SiC (0001) C-face successfully. ► HRTEM results indicate that Si film has epitaxial connection with the 6H–SiC substrate. ► The lattice-matching mode of the Si/SiC interface is defined by HRTEM.