Irradiation in 6H–SiC single crystal wafers has been performed at temperatures ranging from 150 to 550 K using 2.0 MeV Au2+ or at 300 K using 50 keV He+ ions. Additional irradiation for the He+-irradiated specimen was carried out near room temperature using 50 MeV I10+ ions to ∼0.1 ions/nm2. In situ isothermal annealing for 6H–SiC irradiated at 500 K to 2.0 Au2+/nm2 was also conducted up to 90 min at the irradiation temperature. The lattice disorder in the irradiated samples has been determined using either 2.0 MeV He+ or 0.94 MeV D+ channeling analysis along the axis. Results show that there is a substantial diffusion of the Si defects into a greater depth during the Au2+ irradiation at 500 and 550 K. Complete amorphization at 550 K does not occur up to a maximum fluence of 15 Au2+/nm2 in this study. Significant thermal recovery of the Si defects produced at 150 K was not observed during the subsequent thermal annealing at 500 K. Following the I10+ irradiation in the He+-irradiated specimen near room temperature, remarkable recrystallization at the amorphous–crystalline interfaces around the damage profile is observed.
If you need more information about Ion beam analysis of irradiation
effects in 6H–SiC, please visit our website:http://www.qualitymaterial.net,
send us email at email@example.com.